A structural perception about intrinsic point defects in kesterite type compound semiconductors

Intrinsic Defects in Semiconductors

In all previous consideration of crystal structure and crystal growth, for simplicity it has been assumed that the silicon crystal lattice is entirely free of defects. Of course, in reality, this cannot be true since at any temperature greater than absolute zero, no crystal of finite size can be absolutely perfect. Indeed, there are a number of different types of defects that can exist within t...

Positron Annihilation at Dislocations and Related Point Defects in Semiconductors

Dislocations act in semiconductors as combined positron traps, consisting of a shallow precursor state, which is related to regular parts of the dislocation line, and bound vacancy-like defects. The motion of dislocations during plastic deformation generates a high number of point defects. The clustering of vacancies to stable voids is regarded as a primary process of the jog dragging mechanism...

Charged point defects in semiconductors and the supercell approximation

The effects of the supercell approximation in first-principles calculations for isolated, charged point defects in semiconductors and insulators are studied. The convergence of the Coulomb energy with respect to the supercell size is investigated. Quantitative numerical results for the standard uniform compensating charge and the newly proposed localized compensating charge scheme are presented...

Compound Semiconductors

Hydrogen in compound semiconductors

Hydrogen can be inadvertently introduced at any of several steps in the fabrication of optoelectronic devices. The most common consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease in the electrical conductivity of the material. The most successfully applied experimental technique for directly determining the involvement of hydrogen has been infrared-ab...